Micron demonstrates 512GB DDR5 module at 9200 MT/s
Micron has demonstrated the world's first 512GB DDR5 RDIMM that reaches speeds up to 9,200 MT/s and uses vertical interconnect packaging with through-silicon vias to stack DRAM dies. The module is validated by AMD and Intel and can enable up to 12TB of DDR5 in a single 24-slot dual-socket server, targeting AI, analytics, in-memory databases, and simulation workloads. Micron says the 512GB RDIMM reduces operating power by more than 60% versus four 128GB RDIMMs, and can deliver up to 1.4 times higher performance on memory-bound Spark SVM workloads compared to 256GB configurations, improving throughput for caching and database platforms.
512GB DDR5 RDIMM delivers 9200 MT/s and enables up to 12TB per server
Context
AI and data workloads need more memory and bandwidth. Micron built a 512GB DDR5 module using vertical stacking and TSVs. AMD and Intel are validating it and server deployment could follow.
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