China's CXMT starts commercial output of G5 DRAM
ChangXin Memory Technologies has started commercial production on a fifth-generation DRAM platform (G5) and announced two 24-gigabit LPDDR5X components for portable devices. CXMT says the G5 process provides at least 50 percent more gross dies per wafer on an 8-gigabit-equivalent basis and uses quadruple patterning to reach an 11.95 nanometer active-area half-pitch. The firm rose to fourth place in DRAM revenue share with 9.5 percent in Q2, and it is exploring a Beijing research line for NAND flash, though no commercial timetable has been set.
G5 platform yields at least 50 percent more gross dies per wafer
Context
CXMT moved its G5 architecture into volume production after prior process steps. Global DRAM supply is tight and leaders focus on server and high-bandwidth products. CXMT could win more orders and may study NAND expansion next.
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